发明名称 |
Method of forming continuous thin film and linear glass substrate with thin film |
摘要 |
A method of continuously forming a thin film includes the step of: moving a glass substrate with a thin strip shape having a constant db/2(d+b), where d is a thickness thereof and b is a width thereof in a cross section thereof, within a range from 0.015 to 0.15 through a film depositing region in which a reaction gas is supplied and a temperature is controlled to be high so that the glass substrate is rapidly heated; and moving continuously the glass substrate, immediately after the film depositing region, to pass through a cooling region in which a temperature is lower than that of the film depositing region, so that the glass substrate is rapidly cooled and the thin film formed of a component of the reaction gas is formed on the glass substrate. |
申请公布号 |
US8673396(B2) |
申请公布日期 |
2014.03.18 |
申请号 |
US20080232183 |
申请日期 |
2008.09.11 |
申请人 |
NAKAMURA TOSHIHIRO;TODA SADAYUKI;KOAIZAWA HISASHI;FURUKAWA ELECTRIC CO., LTD. |
发明人 |
NAKAMURA TOSHIHIRO;TODA SADAYUKI;KOAIZAWA HISASHI |
分类号 |
C23C16/24;C23C16/458;C23C16/46;C23C16/54;H01L21/02 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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