Structure and method of forming a transistor with asymmetric channel and source/drain regions

摘要

A semiconductor structure includes a semiconductor substrate. A conductive gate abuts a gate insulator for controlling conduction of a channel region. The gate insulator abuts the channel region. A source region and a drain region are associated with the conductive gate. The source region includes a first material and the drain region includes a second material. The conductive gate is self-aligned to the first and the second material.