| 摘要 |
<p>A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may include a gate oxide layer formed on a silicon substrate, at least one nanorod embedded in the gate oxide layer having both ends thereof exposed, a source electrode and a drain electrode connected to opposite sides of the at least one Ge nanorod, and a gate electrode formed on the gate oxide layer between the source electrode and the drain electrode.</p> |
