| 摘要 |
A semiconductor device including a silicon substrate, a plurality of silicon nanowire clusters, a first circuit layer and a second circuit layer. The silicon substrate has a first surface, a second surface opposite to the first surface and a plurality of through holes. The silicon nanowire clusters are disposed in the through holes of the silicon substrate, respectively. The first circuit layer is disposed on the first surface and connected to the silicon nanowire clusters. The second circuit layer is disposed on the second surface and connected to the silicon nanowire clusters. |
