| 摘要 |
PROBLEM TO BE SOLVED: To aggregate a plurality of crystal pieces densely on a crystal wafer, thereby increasing the number of crystal pieces obtained.SOLUTION: Provided is an AT-cut crystal wafer in thickness of T having a plurality of crystal pieces formed thereon, the crystal wafer being characterized in that a side face crossing a Z' axis of a penetration part formed on the crystal wafer by wet etching is constituted by a face orthogonal to an R face and by an m face, that a boundary between a face orthogonal to the R face and the m face on one side of the penetration part is juxtaposed with a boundary between the face orthogonal to the R face and the m face on the adjacent other side vertically in the thickness direction, and that the face orthogonal to the R face on the other side is located on the m face on the one side, and the m face on the other side is located on the face orthogonal to the R face on the one side. |
