METHOD OF FORMING AN OPENING AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

In a method of forming an opening according to one embodiment of the present invention, a first alignment mark is formed in a second region of a substrate which includes a first region and the second region. An etching object layer including a crystalline material is formed on the substrate and the first alignment mark. The etching object layer part located in the first region become amorphous. The amorphous etching object layer part is etched.