发明名称 PHOTORESIST COMPOSITION AND PATTERNING METHOD USING THE SAME
摘要 <p>The present invention relates to a photoresist composition and patterning method using the same. The photoresist composition of the present invention minimizes the loss from side etching to form a micro pattern having a great linearity and a uniform shape. The photoresist pattern is able to improve the adhesion properties to a bottom substrate, the sensitivity, the heat-resisting properties, etc. [Reference numerals] (AA) Example 1; (BB) Example 2; (CC) Comparative example 1</p>
申请公布号 KR20140032695(A) 申请公布日期 2014.03.17
申请号 KR20120099315 申请日期 2012.09.07
申请人 LG CHEM. LTD. 发明人 SHIN, BO RA;JEONG, HYE WON;HAN, HEE;KIM, KYUNG JUN;PARK, CHAN HYO
分类号 G03F7/004;G03F7/26;H01L21/027 主分类号 G03F7/004
代理机构 代理人
主权项
地址