| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage having enhanced characteristics.SOLUTION: A nonvolatile storage includes a first conductive layer, a second conductive layer, and a resistance change layer. The resistance change layer is provided between the first conductive layer and the second conductive layer, capable of transiting between a low resistance state and a high resistance state, and includes an oxide containing at least any one of hafnium (Hf) and zirconium (Zr), at least any one element selected from a group consisting of barium (Ba), lantern (La), gadolinium (Gd) and lutetium (Lu), and nitrogen (N). |
