| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target having high density and low resistance, and to provide a thin film transistor having high field-effect mobility and high reliability.SOLUTION: A sputtering target includes a sintered body including a homologous structure compound which includes oxides including indium element (In), zinc element (Zn), and aluminum element (Al) and which is represented by InAlO(ZnO)(m is 0.1-10). The atomic ratio of the indium element, the zinc element, and the aluminum element is expressed by the following formulae (1)-(3): 0.10≤In/(In+Zn+Al)≤0.70 (1), 0.15≤Zn/(In+Zn+Al)≤0.65 (2), and 0.01≤Al/(In+Zn+Al)≤0.45 (3). |
