发明名称 MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE AND CONTROL METHOD THEREOF
摘要 The present invention provides a memory system with a reduced read error rate (RER) and a control method thereof. The memory system according to the present invention comprises: a host which generates data bit inversion (DBI) information that correspond to data according to a plurality of bits of the data, and provides the DBI information and the data; and a non-volatile memory device which programs the DBI information and the data, wherein the non-volatile memory device programs the bits of the data by reversing according to the DBI information.
申请公布号 KR20140032787(A) 申请公布日期 2014.03.17
申请号 KR20120099507 申请日期 2012.09.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JIN HYUN;SON, TAE SIK
分类号 G11C16/02;G11C11/15;G11C16/06 主分类号 G11C16/02
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