发明名称 |
MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE AND CONTROL METHOD THEREOF |
摘要 |
The present invention provides a memory system with a reduced read error rate (RER) and a control method thereof. The memory system according to the present invention comprises: a host which generates data bit inversion (DBI) information that correspond to data according to a plurality of bits of the data, and provides the DBI information and the data; and a non-volatile memory device which programs the DBI information and the data, wherein the non-volatile memory device programs the bits of the data by reversing according to the DBI information. |
申请公布号 |
KR20140032787(A) |
申请公布日期 |
2014.03.17 |
申请号 |
KR20120099507 |
申请日期 |
2012.09.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JIN HYUN;SON, TAE SIK |
分类号 |
G11C16/02;G11C11/15;G11C16/06 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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