| 摘要 |
The present invention relates to a pad used in a semiconductor test and, more specifically, to a semiconductor test pad using the lamination of a metal thin film and a manufacturing method thereof. After laminating the metal thin film on an insulating sheet of a resin system, a first sheet is manufactured by etching the metal thin film. The metal thin film is manufactured by vertically cutting the lamination of the first sheet. The manufacturing method comprises a sheet manufacturing step for manufacturing the first sheet by coating insulating first resin on a conductive metal thin film; an etching step for manufacturing a second sheet in which each conductor on each line is separated at a predetermined distance by etching the metal thin film of the first sheet to form a plurality of lines; a lamination step for manufacturing one stack by laminating second sheets; and a cutting step for vertically cutting the stack to predetermined thickness. [Reference numerals] (S1) Sheet manufacturing step; (S1a,S3a) Primer coating step; (S2) Etching step; (S3) lamination step; (S3b) Coating step; (S4) Cutting step; (S5) Plating step |
