发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent an excess stress from being applied to a connection part of two semiconductor chips in a semiconductor device in which a chip laminate including a small-diameter semiconductor chip and a large-diameter semiconductor chip is mounted on a top face of a base material.SOLUTION: In a semiconductor device manufacturing method, by mounting a large-diameter first semiconductor chip on a support substrate and subsequently mounting a small-diameter second semiconductor chip on the first semiconductor chip, since a tilt and slip of the second semiconductor chip mounted on the first semiconductor chip can be inhibited, an excess stress can be inhibited from being applied to a connection part of the first semiconductor chip and the second semiconductor chip.
申请公布号 JP2014049592(A) 申请公布日期 2014.03.17
申请号 JP20120190993 申请日期 2012.08.31
申请人 RENESAS ELECTRONICS CORP 发明人 SUGIYAMA MICHIAKI;KINOSHITA YOSHIHIRO
分类号 H01L25/18;H01L25/065;H01L25/07 主分类号 H01L25/18
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