SiC SINGLE CRYSTAL MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a SiC single crystal manufacturing method capable of improving a growing rate in a solution method more drastically than the prior art.SOLUTION: A method for manufacturing a SiC single crystal, which is put into a crucible and made to grow by holding a seed crystal substrate in contact with a Si-C solution having a temperature gradient growing down from the inside to a liquid level. The temperature gradient within a range of 10 mm from the liquid level of the Si-C solution is larger than 42°C/cm.