| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light-emitting element capable of reducing forward voltage while improving light-emitting output.SOLUTION: A group III nitride semiconductor light-emitting element 100 comprises a p-side electrode 116, a p-type group III nitride semiconductor layer 112, a light-emitting layer 110, an n-type group III nitride semiconductor layer 108, and a buffer layer 106 including an undoped group III nitride semiconductor layer in this order. The buffer layer 106 is provided with an exposed part 126. An n-type electrode 122 is continuously provided on the n-type group III nitride semiconductor layer 108 exposed in the exposed part 126 and on the buffer layer 106. The n-type electrode 122 includes a plurality of contact parts 122c in contact with the n-type group III nitride semiconductor layer 108. The respective contact parts are electrically connected to each other on the buffer layer 106. |
