| 摘要 |
PROBLEM TO BE SOLVED: To provide a material for forming a self-organization pattern that can make a nanometer order fine pattern in which etching resistance is high.SOLUTION: Provided is a compound in which a silsesquioxane skeleton having a group selected from a group consisting of a substituted or unsubstituted aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, a heterocyclic group, and a siloxanyl group, a disiloxanyl group, a trisiloxanyl group, and a polysiloxanyl group substituted by an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, and a heterocyclic group, and a hydrogen group, is bonded to an organic group selected from a group consisting of a sugar skeleton, a steroid skeleton, an oligo amino acid skeleton, an oligo lactic acid skeleton, a porphyrin skeleton, and a multiple string type compound skeleton, through a specific divalent bonding hand. |
