发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To inhibit defects caused by a short-circuit between a wire for a semiconductor chip in an upper stage and a wire for a semiconductor chip in a lower stage in a mold process of a semiconductor device in which semiconductor chips of the same kind are stacked on a wiring board in a step-like manner.SOLUTION: A semiconductor device manufacturing method comprises a mold process of stacking a plurality of semiconductor chips of the same kind each of which has a plurality of bonding pads which are formed along a first edge and have metal layers on surfaces in a step-like manner, respectively, and connecting the other end of a wire connected to the bonding pad of the semiconductor chip in an upper stage to a bonding lead of the wiring board without being routed through the bonding pad of the semiconductor chip in a lower stage. In the mold process, an encapsulation resin is supplied from a second edge side opposite to the first edge toward the first edge side.
申请公布号 JP2014049501(A) 申请公布日期 2014.03.17
申请号 JP20120189179 申请日期 2012.08.29
申请人 RENESAS ELECTRONICS CORP 发明人 KURODA HIROSHI
分类号 H01L25/18;H01L21/3205;H01L21/56;H01L21/60;H01L21/768;H01L23/522;H01L25/065;H01L25/07;H01L27/10 主分类号 H01L25/18
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