| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage device with a high storage density.SOLUTION: According to an embodiment, the nonvolatile storage device including a first conductive part, a second conductive part, and a storage layer is provided. The second conductive part contains metal atoms of at least one of lithium, chromium, iron, copper, indium, tellurium, calcium, sodium, silver, cobalt, gold, titanium, tungsten, erbium, platinum, aluminum, and nickel or an alloy thereof. The storage layer includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The first semiconductor layer is provided between the first conductive part and the second conductive part. The second semiconductor layer is provided between the first semiconductor layer and the second conductive part. The storage layer reversibly transitions between a first state having a low resistance and a second state having a higher resistance than the first state by at least one of a voltage applied through the first conductive part and the second conductive part and a current supplied through them. |
