发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND OPERATION METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To improve durability in rewriting, data retention characteristic and a resistance ratio between ON/OFF states while achieving a low-current operation.SOLUTION: A nonvolatile semiconductor storage device according to the present embodiment comprises: a semiconductor substrate; and memory cells which are arranged on the semiconductor substrate and include variable resistive elements, respectively. The variable respective element includes a lamination structure composed of a phase change element which has at least two resistive states different from each other by making a crystal condition variable and a magnetoresistance effect element which has at least two resistive states different from each other by making a magnetization state variable and which applies or does not apply a magnetic field to the phase change element depending on the magnetization state. |
申请公布号 |
JP2014049497(A) |
申请公布日期 |
2014.03.17 |
申请号 |
JP20120189094 |
申请日期 |
2012.08.29 |
申请人 |
TOSHIBA CORP |
发明人 |
NAKAI TSUKASA;OSEGI JUNICHI;AOKI NOBUTOSHI |
分类号 |
H01L21/8246;H01L27/105;H01L29/82;H01L43/08;H01L45/00;H01L49/00 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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