发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND OPERATION METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To improve durability in rewriting, data retention characteristic and a resistance ratio between ON/OFF states while achieving a low-current operation.SOLUTION: A nonvolatile semiconductor storage device according to the present embodiment comprises: a semiconductor substrate; and memory cells which are arranged on the semiconductor substrate and include variable resistive elements, respectively. The variable respective element includes a lamination structure composed of a phase change element which has at least two resistive states different from each other by making a crystal condition variable and a magnetoresistance effect element which has at least two resistive states different from each other by making a magnetization state variable and which applies or does not apply a magnetic field to the phase change element depending on the magnetization state.
申请公布号 JP2014049497(A) 申请公布日期 2014.03.17
申请号 JP20120189094 申请日期 2012.08.29
申请人 TOSHIBA CORP 发明人 NAKAI TSUKASA;OSEGI JUNICHI;AOKI NOBUTOSHI
分类号 H01L21/8246;H01L27/105;H01L29/82;H01L43/08;H01L45/00;H01L49/00 主分类号 H01L21/8246
代理机构 代理人
主权项
地址