发明名称 STRIPPER COMPOSITION FOR THICK NEGATIVE PHOTORESIST
摘要 PROBLEM TO BE SOLVED: To provide a stripper composition for a photoresist.SOLUTION: The stripper composition for a photoresist comprises: 1 to 5 mass% of a compound expressed by chemical formula (1); 70 to 95 mass% of a polar organic solvent; 0.1 to 5 mass% of a hydroxide-based compound; and the balance water. As the stripper composition particularly does not contain an anticorrosive in the composition but contains an appropriate amount of the compound expressed by chemical formula (1), a stripping process can be efficiently completed in a short time, and thereby, changes in the composition can be minimized in the stripping process that is carried out at a relatively high temperature compared to other processes. As the composition does not contain an anticorrosive, a post-process failure such as vapor deposition failure due to adsorption of a water-insoluble anticorrosive can be prevented as well as damages on an electrode can be prevented.
申请公布号 JP2014048667(A) 申请公布日期 2014.03.17
申请号 JP20130178183 申请日期 2013.08.29
申请人 ENF TECHNOLOGY CO LTD 发明人 KANG YONG HUN;PARK YOUNG JIN;LEE SANG DAI;RYU HYUN KYU
分类号 G03F7/42;H01L21/027 主分类号 G03F7/42
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