SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a technology of achieving high integration of a semiconductor device which employs a TSV technique.SOLUTION: A semiconductor device comprises through electrodes which include a small-diameter through electrode TE1 which is formed in a semiconductor substrate SW on a principal surface S1 side and has a first diameter and a large-diameter through electrode TE2 which is formed in the semiconductor substrate SW on a rear face S2 side and has a second diameter larger than the first diameter. The small-diameter through electrode TE1 is arranged inside the large-diameter through electrode TE2 in planar view in a manner such that the center position of the small-diameter through electrode TE1 does not overlap the center position of the large-diameter through electrode TE2 in planar view.