| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of executing an accurate operation to a plurality of selected memory cells.SOLUTION: A semiconductor memory device of one embodiment includes: a plurality of first wirings; a plurality of second wirings; a memory cell array that includes memory cells that are arranged at intersection parts of the first wirings and second wirings; and a control circuit that is constituted so as to apply a first potential difference required for the operation of selected memory cells. The memory cell array is divided into a plurality of memory bays. The memory bays are divided into a plurality of memory blocks. The control circuit is constituted so that when executing an operation by applying the first potential difference to a plurality of selected memory cells within one of the memory blocks a plural number of times, a first voltage and second voltage are applied to a plurality of the first wirings and one of the second wirings, respectively, so as to apply the first potential difference to a plurality of selected memory cells and simultaneously change the number of selected memory cells to which the first potential difference is to be applied. |
