| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an insulation film that can perform stable film formation for a long time while suppressing instability of a discharge and production of particles and dust due to an insulator sticking on a deposition preventive plate when sputtering an insulator target.SOLUTION: There is provided a method of forming insulation films that includes first and second insulation film formation processes of forming the insulation films of a metal compound on surfaces of first and second treatment substrates 30 by sputtering an insulator target 21a made of a metal compound with insulation properties in an atmosphere of an inert gas, a metal film being formed on a surface of a deposition preventive plate 15 by sputtering the metal target 21b made of the same metal as metal that the metal compound contains in the atmosphere of the inert gas after the first insulation film formation process and before the second insulation film formation process. The surface of the deposition preventive plate 15 is coated with the metal film having the same potential with the deposition preventive plate 15, so instability of discharge and production of particles and dust under an influence of an insulator sticking on the deposition preventive plate 15 can be suppressed in the second insulation film formation process. |
