SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an improved method by a germanidation process of reducing or avoiding formation of voids in a transistor device including germanium-based channel layer, source region and drain region.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a gate structure 5 on a germanium-containing channel layer 20 formed on a substrate and between a germanium-based source region 3 and drain region 4 which are opposite to each other with respect to the germanium-containing channel layer; a process of forming a cap layer 7 containing Si and Ge on the germanium-based source region and drain region; a process of depositing a metal layer 54 on the cap layer; performing a temperature step to alter at least a part of a cap layer to a metal germano-silicide which does not dissolve in a predetermined etchant composed to dissolve metal; and a process of selectively removing unconsumed metal from the substrate by the predetermined etchant.