| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving the withstanding voltage performance without increase in size of a transistor.SOLUTION: A semiconductor device according to an embodiment comprises: a drain region and a source region of a first conductivity type that are provided in an upper surface part of a semiconductor layer; an insulating layer region extending downward from the upper surface of the semiconductor layer at a position partitioning between the drain region and the source region; a semiconductor region of a first conductivity type extending downward from a lower surface of the drain region, and having impurity concentration lower than that of the drain region; a semiconductor region of a second conductivity type extending downward from a lower surface of the source region, and bonded with the semiconductor region of the first conductivity type at an inner part of the semiconductor layer; and a gate electrode buried in the insulating layer region, having an upper surface located below the upper surface of the drain region, and provided closer to the semiconductor region of the second conductivity type than the semiconductor region of the first conductivity type. |
