发明名称 REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON USING THE MONOSILANE PROCESS
摘要 <p>A REACTOR (10) IS DISCLOSED FOR PRODUCING POLYCRYSTALLINE SILICON, WHICH REACTOR IS PROVIDED WITH A REACTOR BASE PLATE (2) WHICH HAS A MULTIPLICITY OF NOZZLES (4) FORMED THEREIN. A SILICON-CONTAINING GAS FLOWS THROUGH THE NOZZLES (4). A PLURALITY OF FILAMENT RODS (6) ARE LIKEWISE MOUNTED ON THE REACTOR BASE PLATE (2). IN ADDITION, A GAS OUTLET OPENING (8) FOR FEEDING USED SILICON-CONTAINING GAS TO AN ENRICHMENT AND/OR TREATMENT STAGE IS PROVIDED. THE GAS OUTLET OPENING (8) IS FORMED AT A FREE END (21) OF AN INNER TUBE (20), WHEREIN THE INNER TUBE (20) IS CONDUCTED THROUGH THE REACTOR BASE PLATE (2). (FIGURE 2)</p>
申请公布号 MY150850(A) 申请公布日期 2014.03.14
申请号 MY2011PI03251 申请日期 2009.10.09
申请人 SCHMID SILICON TECHNOLOGY GMBH 发明人 STÖCKLINGER, ROBERT
分类号 C01B33/035 主分类号 C01B33/035
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