| 摘要 |
Provided are a white light emitting diode and a manufacturing method thereof. An n-type semiconductor layer, a first active layer which emits green light, a second active layer which emits blue light, and a p-type semiconductor layer are laminated on a substrate of the white light emitting diode. The first active layer and the second active layer have a structure on which a quantum well layer and a quantum barrier layer are alternatively laminated. The quantum barrier layer of the first active layer and the quantum barrier layer of the second active layer are characterized by N or P doping regardless of each other. The present invention solves non-uniform carrier distribution problems in the active layer by selectively applying the N or P doping to the quantum barrier layer, thereby improving internal quantum efficiency. |
