发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device includes a lamination structure of an insulating capping line and a conductive line extended in a first direction on a substrate; contact plugs which have a sidewall facing the conductive line with air spacers therebetween and arranged in a line in the first direction; and a support which has a width varying according to a position in the first direction and formed between the contact plugs and the insulating capping line in order to define the height of the air spacer.
申请公布号 KR20140032219(A) 申请公布日期 2014.03.14
申请号 KR20120098852 申请日期 2012.09.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, YOO SANG;CHUNG, HYUN WOO;KIM, DAE IK
分类号 H01L27/108;H01L21/28;H01L21/8242 主分类号 H01L27/108
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