发明名称 NON-VOLATILE MEMORY (NVM) THAT USES SOFT PROGRAMMING
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile memory that uses enhanced soft programming.SOLUTION: A semiconductor memory device comprises a memory controller, and an array of memory cells coupled to communicate with the memory controller. The memory controller is configured to perform a first soft program operation using first soft program voltages and a first soft program verification level, and determine whether a first charge trapping threshold has been reached. When the first charge trapping threshold has been reached, a second soft program operation is performed using second soft program voltages and a second soft program verification level.
申请公布号 JP2014044786(A) 申请公布日期 2014.03.13
申请号 JP20130157841 申请日期 2013.07.30
申请人 FREESCALE SEMICONDUCTOR INC 发明人 MU FUCHEN;WANG YANZHUO
分类号 G11C16/02 主分类号 G11C16/02
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