发明名称 |
COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, METHOD FOR FORMING THIN FILM AND THIN FILM FORMED USING THE SAME METHOD |
摘要 |
Cracking does not occur in a ferroelectric thin film even when Ce is not doped in a composition for forming ferroelectric thin films and a composition for forming relatively thick ferroelectric thin films contains lead acetate instead of lead nitrate. A ferroelectric thin film made of a titanate lead-based perovskite film or a titanate zirconate lead-based complex perovskite film is formed using the composition for forming ferroelectric thin films. The composition includes lead acetate, a stabilizing agent made of lactic acid and polyvinyl pyrrolidone. In addition, a monomer-equivalent molar ratio of polyvinyl pyrrolidone to a perovskite A site atom included in the composition is more than 0 to less than 0.015. Furthermore, a weight average molecular weight of the polyvinyl pyrrolidone is 5000 to 100000. |
申请公布号 |
US2014072819(A1) |
申请公布日期 |
2014.03.13 |
申请号 |
US201314023903 |
申请日期 |
2013.09.11 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
FUJII JUN;SAKURAI HIDEAKI;SOYAMA NOBUYUKI |
分类号 |
H01B3/44;H01B19/04 |
主分类号 |
H01B3/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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