发明名称 COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, METHOD FOR FORMING THIN FILM AND THIN FILM FORMED USING THE SAME METHOD
摘要 Cracking does not occur in a ferroelectric thin film even when Ce is not doped in a composition for forming ferroelectric thin films and a composition for forming relatively thick ferroelectric thin films contains lead acetate instead of lead nitrate. A ferroelectric thin film made of a titanate lead-based perovskite film or a titanate zirconate lead-based complex perovskite film is formed using the composition for forming ferroelectric thin films. The composition includes lead acetate, a stabilizing agent made of lactic acid and polyvinyl pyrrolidone. In addition, a monomer-equivalent molar ratio of polyvinyl pyrrolidone to a perovskite A site atom included in the composition is more than 0 to less than 0.015. Furthermore, a weight average molecular weight of the polyvinyl pyrrolidone is 5000 to 100000.
申请公布号 US2014072819(A1) 申请公布日期 2014.03.13
申请号 US201314023903 申请日期 2013.09.11
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 FUJII JUN;SAKURAI HIDEAKI;SOYAMA NOBUYUKI
分类号 H01B3/44;H01B19/04 主分类号 H01B3/44
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