发明名称 |
Back Side Defect Reduction for Back Side Illuminated Image Sensor |
摘要 |
Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystallized silicon layer is formed on the back side of the substrate. The recrystallized silicon layer has different photoluminescence intensity than the substrate. |
申请公布号 |
US2014073080(A1) |
申请公布日期 |
2014.03.13 |
申请号 |
US201314088596 |
申请日期 |
2013.11.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHUANG CHUN-CHIEH;YAUNG DUN-NIAN;TU YEUR-LUEN;LIU JEN-CHENG;CHOU KENG-YU;WANG CHUNG CHIEN |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|