发明名称 SYSTEMS, METHODS, AND DEVICES WITH WRITE OPTIMIZATION IN PHASE CHANGE MEMORY
摘要 <p>Methods and systems for phase change memories and arrays with improved write characteristics. If a data word can be more efficiently written by e.g. exchanging SETs and RESETs, it is written as such on the fly, and e.g. a bit of overhead is written to indicate the transformation. This has a surprising synergy with phase change memory as SET operations usually take longer and consume more power than do RESET operations. In one sample embodiment of multilevel phase change memory, states intermediate between SET and RESET can be even less desirable to write than SETs, as they take more precision than do the extreme states of SET and RESET, so that a desirable transformation can be to exchange intermediate states for extreme states.</p>
申请公布号 WO2014039329(A1) 申请公布日期 2014.03.13
申请号 WO2013US56831 申请日期 2013.08.27
申请人 BEING ADVANCED MEMORY CORPORATION 发明人 LI, YUANXING;BUTLER, VAN;JURASEK, RYAN, A.
分类号 G06F12/00 主分类号 G06F12/00
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