NONVOLATILE CONTENT ADDRESSABLE MEMORY

摘要

A nonvolatile content addressable memory cell includes first and second resistance change elements (Rj, Rjb). Bit lines (BL, /BL) are respectively connected to one terminals (n2, n3) of the first and second resistance change elements via transistors (M3, M4) the gates of which are connected in common to a word line (WL), and a plate line (PL) is connected in common to the other terminals. Transistors (M1, M2) to the gates of which search lines (SL, /SL) are respectively connected are connected to the one terminals of the first and second resistance change elements. A power supply is connected to the transistors (M1, M2) via a transistor (M5), and a match line (ML) that is an output line is connected thereto via a transistor (M6).