发明名称 CONTROL OVER HYDROGEN FLUORIDE LEVELS IN OXIDE ETCHANT
摘要 The invention is directed towards methods and compositions for identifying the amount of hydrofluoric acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of hydrofluoric acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of hydrofluoric acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the hydrofluoric acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.
申请公布号 US2014073060(A1) 申请公布日期 2014.03.13
申请号 US201314082448 申请日期 2013.11.18
申请人 NALCO COMPANY 发明人 TSENG AMY M.;JENKINS BRIAN V.;MACK ROBERT
分类号 G01N21/80 主分类号 G01N21/80
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