发明名称 |
POWER SEMICONDUCTOR MODULE |
摘要 |
<p>The present invention suppresses LC resonance including wiring inductance between a power semiconductor element and a smoothing capacitor, and also reduces surge voltage. This power semiconductor module is provided with: a first power semiconductor element; a second power semiconductor element; a first conductor connected to the first power semiconductor element; a second conductor connected to the second power semiconductor element; a first terminal connected to the first conductor; a second terminal connected to the second conductor; and a snubber circuit having a capacitor element and a resistor element configured from a semiconductor resistor. The first terminal is disposed opposing the second terminal; the snubber circuit is disposed at the region at which the first terminal and second terminal are opposing; one terminal of the snubber circuit is connected to the opposing surface of the first terminal; and the other terminal of the snubber circuit is connected to the opposing surface of the second terminal.</p> |
申请公布号 |
WO2014038299(A1) |
申请公布日期 |
2014.03.13 |
申请号 |
WO2013JP69726 |
申请日期 |
2013.07.22 |
申请人 |
HITACHI AUTOMOTIVE SYSTEMS, LTD. |
发明人 |
FUNABA SEIJI;NOTO YASUO;TSUJI MASASHIGE |
分类号 |
H01L25/07;H01L25/18;H02M7/48 |
主分类号 |
H01L25/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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