WAFER LEVEL LIGHT-EMITTING DIODE ARRAY

摘要

The present invention relates to a wafer level light-emitting diode (LED) array. An LED array according to one embodiment includes: a growth substrate; a plurality of LEDs arranged on the substrate, each of which has a first semiconductor layer, an activation layer, and a second semiconductor layer; a plurality of top electrodes arrayed on the plurality of LEDs, formed from the same material, and electrically connected respectively to the first semiconductor layers of the corresponding LEDs; and first and second pads arranged on the top electrodes. One or more of the top electrodes are electrically connected to the second semiconductor layers of adjacent LEDs, wherein the others of the top electrodes are insulated from the second semiconductor layers of the adjacent LEDs, the LEDs are connected in series by the top electrodes, the first pad is electrically connected to an input LED from among the LEDs connected in series, and the second pad is electrically connected to an output LED from among the LEDs connected in series. Accordingly, a flip chip-type LED array can be provided which can be driven with a high voltage.