| 摘要 |
<p>This semiconductor device has disposed therein: a columnar silicon layer (121) having therein a first diffusion layer (156), a channel region (121), and a second diffusion layer (150) formed in this order from the silicon substrate (101) side; floating gates (133, 134) in the two symmetrical directions with the columnar silicon layer therebetween; and control gate lines (147) in the two directions symmetrical to each other with the columnar silicon layer therebetween, said directions being different from the above-mentioned two directions. Tunnel insulating films (127) are formed between the columnar silicon layer and respective floating gates. The control gate lines are disposed to surround the floating gates and the columnar silicon layer with inter-polysilicon insulating films (145) therebetween.</p> |
