| 摘要 |
The present invention relates to a semiconductor light emitting device comprising a growth substrate, a plurality of semiconductor layers, a non-conductive reflecting film, a first electrode, and a second electrode. The plurality of semiconductor layers is formed on the growth substrate and comprises a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different to the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and which generates light by recombining electrons and holes. The non-conductive reflecting film is formed on the second semiconductor layer to reflect the light from the active layer to the growth substrate and is extended to the growth substrate. The first electrode supplies at least one among electrons or holes to the first semiconductor layer. The second electrode supplies the remaining one among the electrons or holes to the second semiconductor layer. |
