THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a thin film transistor and a manufacturing method thereof. According to one embodiment of the present invention, the thin film transistor includes a gate electrode, a gate insulating layer located on the gate electrode, a first semiconductor located on the gate insulating layer, a second semiconductor which is located on the first semiconductor and has a plane shape which is different from the plane shape of the first semiconductor, and a source electrode and a drain electrode which are located on the second semiconductor and face each other.