| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method of a trench having high in-plane uniformity in processed dimension, and a semiconductor device manufacturing method.SOLUTION: A trench formation method according to an embodiment is a trench formation method of forming trenches in a silicon substrate by alternately repeating a deposition step and an etching step by use of a plasma source. When it is assumed that a distance between a region for plasma confinement and the silicon substrate is x (mm), RF power for inducing the plasma is w (kW), pressure in the deposition step is y (Pa) and a permitted limit of in-plane variation in the silicon substrate with respect to a width of the trench to be formed is z(μm), the deposition step and the etching step are performed so as to satisfy the following mathematical formulas. |
