| 摘要 |
<p>The purpose of the present invention is to provide an epitaxial wafer with excellent pressure resistance, including a growth film having a reduced carrier concentration, and having an M-plane as a growth principal surface. This epitaxial wafer includes: a semiconductor substrate made of a nitride of a metal of Group XIII in the periodic table, having the M-plane as a growth principal surface; and an epitaxial growth film that is provided on the growth principal surface, that is made of a semiconductor of a nitride of a metal of Group XIII in the periodic table, and that has a carrier concentration of 1×1015 to 1×1017 cm-3.</p> |
