WIDE-GAP SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A wide-gap semiconductor device (1) has a substrate (10) and a Schottky electrode (4). The substrate (10) is formed of a wide-gap semiconductor material, has a main surface (10a), and includes a first conductivity-type region (17) and a second conductivity-type region (15). The Schottky electrode (4) is disposed in contact with the main surface (10a) of the substrate (10). The substrate (10) has formed therein a trench having side surfaces (10b) continuous with the main surface (10a), and a bottom portion (10c) continuous with the side surfaces (10b). The Schottky electrode (4) is in contact with the first conductivity-type region (17) on the side surfaces (10b) of the trench and the main surface (10a), and also in contact with the second conductivity-type region (15) at the bottom portion (10c) of the trench. The side surfaces (10b) of the trench is tilted with respect to the main surface (10a) of the substrate (10). Consequently, the wide-gap semiconductor device (1) wherein an electric field at the interface between the Schottky electrode (4) and the substrate (10) can be effectively relaxed, and a method for manufacturing the wide gap semiconductor device can be provided.