| 摘要 |
The present invention relates to a semiconductor light emitting device comprising a plurality of semiconductor layers; a support substrate; and one or more PN junction diodes. The support substrate is bonded to support the semiconductor layers and comprises a semiconductor. The support substrate comprises a first surface and a second surface which is faced to the first surface. The support substrate comprises a first electrical path and a second electrical path which are connected from the second surface to the first surface. The first electrical path offers at least one of electron or hole to the semiconductor layers. The second electrical path offers the remaining one of the electron or the hole to the semiconductor layers. The PN junction diodes are formed on the support substrate. The PN junction diodes are electrically connected to the semiconductor layers by using the first electrical path and the second electrical path. |
