<p>Self-aligned contacts in a metal gate structure and methods of manufacture are disclosed herein. The method includes forming a metal gate structure (22) having a sidewall structure (24). The method further includes recessing the metal gate structure (22) and forming a masking (30) material within the recess. The method further includes forming a borderless contact (38) adjacent to the metal gate structure (22), overlapping the masking (30) material and the sidewall structure (24).</p>
申请公布号
WO2014039166(A1)
申请公布日期
2014.03.13
申请号
WO2013US50030
申请日期
2013.07.11
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
FAN, SU, CHEN;HORAK, DAVID, V.;PONOTH, SHOM;RATH, DAVID, L.;SANKARAPANDIAN, MUTHUMANICKAM