发明名称 SELF-ALIGNED CONTACTS
摘要 <p>Self-aligned contacts in a metal gate structure and methods of manufacture are disclosed herein. The method includes forming a metal gate structure (22) having a sidewall structure (24). The method further includes recessing the metal gate structure (22) and forming a masking (30) material within the recess. The method further includes forming a borderless contact (38) adjacent to the metal gate structure (22), overlapping the masking (30) material and the sidewall structure (24).</p>
申请公布号 WO2014039166(A1) 申请公布日期 2014.03.13
申请号 WO2013US50030 申请日期 2013.07.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FAN, SU, CHEN;HORAK, DAVID, V.;PONOTH, SHOM;RATH, DAVID, L.;SANKARAPANDIAN, MUTHUMANICKAM
分类号 H01L21/336;H01L21/28;H01L29/78 主分类号 H01L21/336
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