发明名称 Ni OR Ni ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a Ni or Ni alloy sputtering target suitable for a magnetron sputtering method which may provide uniform deposition on substrates, enabling uniform hardness distribution and uniform leaked magnetic field, and to provide a manufacturing method of the target.SOLUTION: A hot-forged Ni or Ni alloy is formed into a plate body having a predetermined thickness by repeatedly cold-rolling with variation in processing rate. Then, the plate body is annealed before being processed into a predetermined shape to form a target. The target has variation in leaked magnetic flux of 12% or lower on the target surface.
申请公布号 JP2014043614(A) 申请公布日期 2014.03.13
申请号 JP20120186693 申请日期 2012.08.27
申请人 MITSUBISHI MATERIALS CORP 发明人 MISEKI KENICHIRO
分类号 C23C14/34;C22F1/00;C22F1/10 主分类号 C23C14/34
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