MANUFACTURING METHOD OF CRYSTAL OF GROUP-XIII ELEMENT NITRIDE

摘要

PROBLEM TO BE SOLVED: To provide a method of achieving homoepitaxial growth of a GaN crystal almost free of lamination defects on a nonpolar or semipolar GaN substrate using a HVPE apparatus with a quartz reactor.SOLUTION: A method of growing a crystal of a group-XIII element nitride includes: a first step for raising a temperature of a base substrate to a growth initiation temperature before growing the crystal of the group-XIII element nitride on a principal plane of the base substrate installed in a quartz reactor 100 of a HVPE apparatus; a second step for raising the temperature of the base substrate to a full-growth temperature from the growth initiation temperature while growing a single crystal layer made of the group-XIII element nitride on the principal plane; and a third step for further growing the crystal of the group-XIII element nitride on the single crystal layer grown in the second step while keeping the temperature of the base substrate at the full-growth temperature.