| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of a nitride semiconductor self-standing substrate that reduces dispersion in film thickness of a thin metallic film among production lots while suppressing a time loss.SOLUTION: A production method of a nitride semiconductor self-standing substrate includes a step for forming a first nitride semiconductor layer 12 on a base substrate 11, a step for forming a thin metallic film 13 on the first nitride semiconductor layer 12, a step for forming a void 14 in the first nitride semiconductor layer 12 and forming pores 15 through the thin metallic film 13, a step for forming a second nitride semiconductor layer 16 supposed to become a nitride semiconductor self-standing substrate 10 on the thin metallic film 13 having the pores 15 formed therethrough, and a step for separating the base substrate 11 from the second nitride semiconductor layer 16 to remove the base substrate 11. The thin metallic film 13 is formed by electroplating or electroless plating. |
