发明名称 COMMON DRAIN POWER CLIP FOR BATTERY PACK PROTECTION MOSFET
摘要 A first embodiment is a common drain+clip 20. It has a conventional drain contact on its bottom surface and is flip chip mounted on a half-etched leadframe 40 which has external source, gate and drain contacts connected to the sources, gate and common drain of the die 20. Common drain clip 50 connects the drain 30 to external contacts between opposite gate contacts. A second embodiment is a direct drain embodiment+heatslug. The device 80 has a top drain contact 36 that extends to the common drain 30 across the bottom of the die which is flip chip mounted to a half-etched leadframe having external source, gate and drain contacts connected to the sources, gates and common drain of the die 80.
申请公布号 US2014070392(A1) 申请公布日期 2014.03.13
申请号 US201314026181 申请日期 2013.09.13
申请人 FAIRCHILD SEMICONDUCTOR CORPORATION 发明人 WU CHUNG-LIN;SAPP STEVEN;DOSDOS BIGILDIS;BELANI SURESH;YOON SUNGGEUN
分类号 H01L23/495;H01L21/56 主分类号 H01L23/495
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