| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
Semiconductor devices and methods of fabricating semiconductor devices are provided. Two or more layers can be formed on a silicon substrate, wherein one or more of the layers are used for controlling an isolation recess. A first layer can comprise a first material and a second layer can comprise a second material. |
| 申请公布号 |
US2014070328(A1) |
申请公布日期 |
2014.03.13 |
| 申请号 |
US201213611040 |
申请日期 |
2012.09.12 |
| 申请人 |
GOTO MASAKAZU;HOKAZONO AKIRA;TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. |
发明人 |
GOTO MASAKAZU;HOKAZONO AKIRA |
| 分类号 |
H01L27/088;H01L21/8234 |
主分类号 |
H01L27/088 |
| 代理机构 |
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| 主权项 |
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