发明名称 |
METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE |
摘要 |
A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure. |
申请公布号 |
US2014073110(A1) |
申请公布日期 |
2014.03.13 |
申请号 |
US201314084166 |
申请日期 |
2013.11.19 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HIRLER FRANZ;KAUTZSCH THORALF;MAUDER ANTON;RUEB MICHAEL;SCHULZE HANS-JOACHIM;STRACK HELMUT;WILLMEROTH ARMIN |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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