发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
摘要 A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.
申请公布号 US2014070231(A1) 申请公布日期 2014.03.13
申请号 US201213613848 申请日期 2012.09.13
申请人 SOLOVIEV STANISLAV IVANOVICH;ELASSER AHMED;BOLOTNIKOV ALEXANDER VIKTOROVICH;VERT ALEXEY;LOSEE PETER ALMERN;GENERAL ELECTRIC COMPANY 发明人 SOLOVIEV STANISLAV IVANOVICH;ELASSER AHMED;BOLOTNIKOV ALEXANDER VIKTOROVICH;VERT ALEXEY;LOSEE PETER ALMERN
分类号 H01L29/74;H01L21/332;H01L29/20;H01L29/24 主分类号 H01L29/74
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